Features: ` Intel SmartVoltage Technology-5 V or 12 V Program/Erase-5 V Read Operation` Very High Performance Read-80 ns Max. Access Time,-40 ns Max. Output Enable Time` Low Power Consumption-Maximum 70 mA Read Current at 5 V` x8/x16-Selectable Input/Output Bus-High Performance 16- or 32-bit CPUs`...
AB28F200BR: Features: ` Intel SmartVoltage Technology-5 V or 12 V Program/Erase-5 V Read Operation` Very High Performance Read-80 ns Max. Access Time,-40 ns Max. Output Enable Time` Low Power Consumption-Maximu...
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Features: ` Intel SmartVoltage Technology-5 V or 12 V Program/Erase-5 V Read Operation` Very High ...
` Intel SmartVoltage Technology
- 5 V or 12 V Program/Erase
- 5 V Read Operation
` Very High Performance Read
- 80 ns Max. Access Time,
- 40 ns Max. Output Enable Time
` Low Power Consumption
- Maximum 70 mA Read Current at 5 V
` x8/x16-Selectable Input/Output Bus
- High Performance 16- or 32-bit CPUs
` Optimized Array Blocking Architecture
- One 16-KB Protected Boot Block
- Two 8-KB Parameter Blocks
- One 96-KB Main Block
- 128-KB Main Blocks
- Top or Bottom Boot Locations
` Hardware-Protection for Boot Block
` Software EEPROM Emulation with Parameter Blocks
` Automotive Temperature Operation
- 40 °C to +125 °C
` Extended Cycling Capability
- 30,000 Block Erase Cycles for Parameter Blocks1,000 Block Erase Cycles for Main Blocks
` Automated Word/Byte Program and Block Erase
- Industry-Standard Command UserInterface
- Status Registers
- Erase Suspend Capability
` SRAM-Compatible Write Interface
` Automatic Power Savings Feature
- 1 mA Typical ICC Active Current in Static Operation
` Reset/Deep Power-Down Input
- 0.2 A ICCTypical
- Provides Reset for Boot Operations
` Hardware Data Protection Feature
- Write Lockout during Power Transitions
` Industry-Standard Surface Mount Packaging
- 44-Lead PSOP: JEDEC ROM Compatible
` ETOX™ Flash Technology
- 0.6 ETOX V Flash Technology
Operating Temperature
During Read........................... 40°C to +125°C
During Block Erase
and Word/Byte Program ....... 40°C to +125°C
Temperature Under Bias........ 40°C to +125°C
Storage Temperature............. 65°C to +125°C
Voltage on Any Pin
(except VCC, VPP, A9 and RP#)
with Respect to GND ................ 2.0V to +7.0V(1)
Voltage on Pin RP# or Pin A9
with Respect to GND ........... 2.0V to +13.5V(1,2)
VPP Program Voltage with Respect
to GND during Block Erase
and Word/Byte Program ..... 2.0V to +14.0V(1,2)
VCC Supply Voltage
with Respect to GND ............... 2.0V to +7.0V(1)
Output Short Circuit Current................ 100 mA (3)
NOTES:
1. Minimum DC voltage is 0.5V on input/output pins.During transitions, this level may undershoot to 2.0Vfor periods <20 ns. Maximum DC voltage on input/output pins isVCC + 0.5V which, during transitions, may overshoot to VCC + 2.0V for periods <20 ns.
2. Maximum DC voltage on VPP may overshoot to +14.0V for periods <20 ns. Maximum DC voltage on RP# or A9 may overshoot to 13.5V for periods <20 ns.
3. Output shorted for no more than one second. No more than one output shorted at a time.