Features: Single Bias Supply Operation (6 V)19 dB Typical Small Signal Gain16 dBm Typical P1 dBOutput Power at 28 GHz0.25 m Ti/Pd/Au Gates100% On-Wafer RF and DC Testing100% Visual Inspection to MIL-STD-883 MT 2010SpecificationsOperating Temperature (T C)............-55°C to +90°C Storage Temperat...
AA028P3-00: Features: Single Bias Supply Operation (6 V)19 dB Typical Small Signal Gain16 dBm Typical P1 dBOutput Power at 28 GHz0.25 m Ti/Pd/Au Gates100% On-Wafer RF and DC Testing100% Visual Inspection to MIL...
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Features: Single Bias Supply Operation (4.5 V)2.6 dB Typical Noise Figure at 23 GHz19 dB Typical S...
Features: 3.2 dB Noise Figure 17 dB Gain+9 dBm Output PowerHermetic Package with Solderable LeadSi...
Features: Surface Mount Package3.2 dB Noise Figure 17 dB Gain+8 dBm Output PowerSingle Voltage Ope...
Single Bias Supply Operation (6 V)
19 dB Typical Small Signal Gain
16 dBm Typical P1 dBOutput Power at 28 GHz
0.25 m Ti/Pd/Au Gates
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 MT 2010
Alpha's three-stage reactively-matched 27-31 G GaAs MMIC driver amplifier AA028P3-00 has typical small signal gain of 19 dB with a typical P1 dB of 16 dBm at 28 GHz.The chip uses Alpha's proven 0.25m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.
The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance.Designed for 27¨C31 GHz LMDS and digital radio bands.