Features: Single Bias Supply Operation (6 V)22 dBm Typical P1 dBOutput Powerat 28 GHz 13.5 dB Typical Small Signal Gain 0.25 m Ti/Pd/Au Gates 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 MT 2010SpecificationsOperating Temperature (T C)............-55°C to +90°C Storage Tem...
AA028P1-00: Features: Single Bias Supply Operation (6 V)22 dBm Typical P1 dBOutput Powerat 28 GHz 13.5 dB Typical Small Signal Gain 0.25 m Ti/Pd/Au Gates 100% On-Wafer RF and DC Testing 100% Visual Inspection t...
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Features: Single Bias Supply Operation (4.5 V)2.6 dB Typical Noise Figure at 23 GHz19 dB Typical S...
Features: 3.2 dB Noise Figure 17 dB Gain+9 dBm Output PowerHermetic Package with Solderable LeadSi...
Features: Surface Mount Package3.2 dB Noise Figure 17 dB Gain+8 dBm Output PowerSingle Voltage Ope...
Alpha's two-stage balanced Ka band GaAs MMIC power amplifier has a typical P1 dB of 22 dBm with 12.5 dB associated gain and 10% power added efficiency at 28 GHz.The chip uses Alpha's proven 0.25m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.
The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.All chips are creened for S-parameters and power characteristics prior o shipment for guaranteed performance.A broad range applications exist in both the commercial and high eliability areas where high power and gain are required.