AA026P2-00

Features: Single Bias Supply Operation (6 V)17 dB Typical Small Signal Gain 24 dBm Typical P1 dBOutput Power at 26.5 GHz100% On-Wafer RF and DC Testing100% Visual Inspection to MIL-STD MT 2010SpecificationsOperating Temperature (T C)............-55°C to +90°C Storage Temperature (TST )...............

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SeekIC No. : 004260845 Detail

AA026P2-00: Features: Single Bias Supply Operation (6 V)17 dB Typical Small Signal Gain 24 dBm Typical P1 dBOutput Power at 26.5 GHz100% On-Wafer RF and DC Testing100% Visual Inspection to MIL-STD MT 2010Specif...

floor Price/Ceiling Price

Part Number:
AA026P2-00
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/27

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Product Details

Description



Features:

Single Bias Supply Operation (6 V)
17 dB Typical Small Signal Gain
24 dBm Typical P1 dBOutput Power  at 26.5 GHz
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD  MT 2010



Specifications

Operating Temperature (T C)............-55°C to +90°C
Storage Temperature (TST )............-65°C to +150°C
Bias Voltage (V D)................................................7 VDC
Power In (PIN ).................................................22 dBm
Junction Temperature (T J)...............................175°C




Description

  Alpha's three-stage balanced K band GaAs MMIC powe amplifier AA026P2-00 has a typical P of 24 dBm and a typical P 1 dB SAT of 26 dBm at 26.5 GHz. The chip uses Alpha's proven 0.25 m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance. A broad range of applications exist in both the commercial and military areas where high power and gain are required.




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