Features: Single Bias Supply Operation (6 V)14 dB Typical Small Signal GainOutput Power 24.5 dBm Typical P1 dBat 23 GHz0.25 m Ti/Pd/Au Gates100% On-Wafer RF and DC Testing100% Visual Inspection to MIL-STD-883 MT 2010SpecificationsOperating Temperature (T C)............-55°C to +90°C Storage Temper...
AA022P1-00: Features: Single Bias Supply Operation (6 V)14 dB Typical Small Signal GainOutput Power 24.5 dBm Typical P1 dBat 23 GHz0.25 m Ti/Pd/Au Gates100% On-Wafer RF and DC Testing100% Visual Inspection to M...
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Features: Single Bias Supply Operation (4.5 V)2.6 dB Typical Noise Figure at 23 GHz19 dB Typical S...
Features: 3.2 dB Noise Figure 17 dB Gain+9 dBm Output PowerHermetic Package with Solderable LeadSi...
Features: Surface Mount Package3.2 dB Noise Figure 17 dB Gain+8 dBm Output PowerSingle Voltage Ope...
Alpha'S two-stage balanced K band GaAs MMIC powe amplifier AA022P1-00 has a typical P1 dB of 24.5 dBm with 13 dB associated gain and 11% power added efficiency at 23 GHz.The chip uses Alpha'Sproven 0.25m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance.A broad range of applications exist in both
the high reliability and commercial areas where high power and gain are required.