Features: • Standard Asynchronous SRAM Interface with Deep Power Down and Page Mode• Organization : 1M x 16Bit• Power Supply Voltage : 2.7 ~ 3.3 V• Page Size : 4 words• Page Mode Access (tPAA) : 35ns• Data Retention Voltage : 2.4V• Deep Power Down : 5uA...
A64S06162A: Features: • Standard Asynchronous SRAM Interface with Deep Power Down and Page Mode• Organization : 1M x 16Bit• Power Supply Voltage : 2.7 ~ 3.3 V• Page Size : 4 words•...
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Features: • Standard Asynchronous SRAM Interface and Page Mode• Organization : 1M x 16...
US $1.74 - 1.88 / Piece
DIP Switches / SIP Switches 16 Position 4x1 Trm Top Actuated Ext Sf
Item | Symbol | Ratings | Unit |
Voltage on any pin relative to Vss | VIN, VOUT | -0.2 to VCC+0.3 V | V |
Voltage on Vcc supply relative to Vss | VCC | -0.2 to 3.6 | V |
Power Dissipation | PD | 1.0 | W |
Storage temperature | TSTG | -55 to 150 | |
Operating Temperature (Extended) | TA | -40 ~ 85 |
Note :
Stresses greater than those listed under "ABSOLUTE MAXIMUM RATINGS" may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
The A64S06162A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Deep Power Down and Page Mode.
The A64S06162A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power computing and communication applications such as mobile cellular phone handsets, personal digital assistants and other battery-operated consumer products.