Features: * Glass passivated chip* High case dielectric strength* High surge current capability* High reliability* Low reverse current* Low forward voltage drop* Ideal for printed circuit boardSpecifications RATING SYMBOL A2W005G A2W01G A2W02G A2W04G A2W06G A2W08G A2W10G UNIT Maxi...
A2W10G: Features: * Glass passivated chip* High case dielectric strength* High surge current capability* High reliability* Low reverse current* Low forward voltage drop* Ideal for printed circuit boardSpeci...
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RATING | SYMBOL | A2W 005G |
A2W 01G |
A2W 02G |
A2W 04G |
A2W 06G |
A2W 08G |
A2W 10G |
UNIT |
Maximum Recurrent Peak Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | Volts |
Maximum RMS Voltage | VRRS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | Volts |
Maximum DC Blocking Voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | Volts |
Minimum Avalanche Breakdown Voltage at 100 mA | VBO (min.) |
100 | 150 | 250 | 450 | 700 | 900 | 1100 | Volts |
Minimum Avalanche Breakdown Voltage at 100 mA | VBO(max.) | 550 | 600 | 700 | 900 | 1150 | 1350 | 1550 | Volts |
Maximum Average Forward Current 0.375" (9.5 mm) lead length Tc = 50°C |
IF(AV) | 20 | Amps. | ||||||
Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) |
IFSM | 50 | Amps. | ||||||
Rating for fusing ( t < 8.3 ms. ) | I2t | 10 | A2S | ||||||
Maximum Forward Voltage per Diode at IF = 1.0 Amp. | VF | 1.0 | Volts | ||||||
Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C |
IR | 10 | A | ||||||
IR(H) | 1.0 | mA | |||||||
Typical Junction Capacitance per Diode (Note 1) | CJ | 24 | pf | ||||||
Typical Thermal Resistance (Note 2) | RqJA | 36 | °C/W | ||||||
Operating Junction Temperature Range | TJ | - 50 to + 150 | °C | ||||||
Storage Temperature Range | TSTG | - 50 to + 150 | °C |