A29L040L-70

Single power supply operation
- Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
- Regulated voltage range: 3.0 to 3.6 volt read and write operations for compatibility with high performance 3.3 volt microprocessors
Access times:
- 70 (max.)
Current:
- 4 mA typical active read current
- 20 mA typical program/erase current
- 200 nA typical CMOS standby
- 200 nA Automatic Sleep Mode current
Flexible sector architecture
- 8 uniform sectors of 64 Kbyte each
- Any combination of sectors can be erased
- Supports full chip erase
- Sector protection:
A hardware method of protecting sectors to prevent any inadvertent program or erase operations within that sector
Embedded Erase Algorithms
- Embedded Erase algorithm will automatically erase the entire chip or any combination of designated sectors and verify the erased sectors
- Embedded Program algorithm automatically writes and verifies bytes at specified addresses
Typical 100,000 program/erase cycles per sector
20-year data retention at 125°C
- Reliable operation for the life of the system
Compatible with JEDEC-standards
- Pinout and software compatible with single-powersupply Flash memory standard
- Superior inadvertent write protection
Data Polling and toggle bits
- Provides a software method of detecting completion of program or erase operations
Erase Suspend/Erase Resume
- Suspends a sector erase operation to read data from, or program data to, a non-erasing sector, then resumes the erase operation
Package options
- 32-pin DIP, PLCC, TSOP (8mm x 20mm) or sTSOP (8mm x 14mm)

Storage Temperature Plastic Packages . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0°C to + 70°C
. . . . . . . . . . . . . . . . . . . . . . for -U series: -45°C to +85°C
Ambient Temperature with Power Applied . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to + 70°C
. . . . . . . . . . . . . . . . . . . . . . for -U series: -45°C to +85°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . .. . . . . . -0.5V to +4.0V
A9 &OE (Note 2) . . . . . . . . . . . . . . ... . . . . . -0.5 to +12.5V
All other pins (Note 1) . . . . . . . . . .... . -0.5V to VCC + 0.5V
Output Short Circuit Current (Note 3) . . . . . ... . . ... 200mA

Notes:
1. Minimum DC voltage on input or I/O pins is -0.5V.During voltage transitions, input or I/O pins may undershoot VSS to -2.0V for periods of up to 20ns.Maximum DC voltage on input and I/O pins is VCC +0.2V. During voltage ransitions, input or I/O pins may overshoot to VCC +2.0V for periods up to 20ns.
2. Minimum DC input voltage on A9 and OE is -0.5V.During voltage transitions, A9 andOE may overshoot VSS to -2.0V for periods of up to 20ns. Maximum DC input voltage on A9 is +12.5V which may overshoot to 14.0V for periods up to 20ns.
3. No more than one output is shorted at a time. Duration of the short circuit should not be greater than one second.

The A29L040 is a 3.0 volt-only Flash memory organized as 524,288 bytes of 8 bits each. The 512 Kbytes of data are further divided into eight sectors of 64 Kbytes each for flexible sector erase capability. The 8 bits of data appear on I/O0 - I/O7 while the addresses are input on A0 to A18. The A29L040 is offered in 32-pin PLCC, TSOP (8mm x 20mm) or sTSOP (8mm x 14mm) packages. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. Additional 12.0 volt VPP is not required for in-system write or erase operations. However,the A29L040 can also be programmed in standard EPROM programmers.

The A29L040 has a second toggle bit, I/O2, to indicate whether the addressed sector is being selected for erase,and also offers the ability to program in the Erase Suspend mode. The standard A29L040 offers access times of 70ns,allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE ), write enable (WE ) and output enable (OE ) controls.

The device A29L040L-70 requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.

The A29L040 is entirely software command set compatible with the JEDEC single-power-supply Flash standard.Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.

Device A29L040L-70 programming occurs by writing the proper program command sequence. This initiates the Embedded Program algorithm - an internal algorithm that automatically times the program pulse widths and verifies proper program margin.

Device A29L040L-70 erasure occurs by executing the proper erasecommand sequence. This initiates the Embedded Erase algorithm - an internal algorithm that automatically preprograms the array (if it is not already programmed)before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper erase margin.

The host system A29L040L-70 can detect whether a program or erase operation is complete by reading the I/O7 ( Data Polling)and I/O6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.

The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The A29L040 is fully erased when shipped from the factory.

The hardware sector protection A29L040L-70 feature disables operations for both program and erase in any combination of the sectors of memory. This can be achieved via programming equipment.

The Erase Suspend A29L040L-70 feature enables the user to put erase on hold for any period of time to read data from, or program data to, any other sector that is not selected for erasure.True background erase can thus be achieved.

Power consumption is greatly reduced when the device is placed in the standby mode.