A29L040

Features:

Single power supply operation
- Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
- Regulated voltage range: 3.0 to 3.6 volt read and
write operations for compatibility with high
performance 3.3 volt microprocessors
Access times:
- 70 (max.)
Current:
- 4 mA typical active read current
- 20 mA typical program/erase current
- 200 nA typical CMOS standby
- 200 nA Automatic Sleep Mode current
Flexible sector architecture
- 8 uniform sectors of 64 Kbyte each
- Any combination of sectors can be erased
- Supports full chip erase
- Sector protection:
A hardware method of protecting sectors to prevent
any inadvertent program or erase operations within
that sector
Embedded Erase Algorithms
- Embedded Erase algorithm will automatically erase
the entire chip or any combination of designated
sectors and verify the erased sectors
- Embedded Program algorithm automatically writes
and verifies bytes at specified addresses
Typical 100,000 program/erase cycles per sector
20-year data retention at 125°C
- Reliable operation for the life of the system
Compatible with JEDEC-standards
- Pinout and software compatible with single-powersupply
Flash memory standard
- Superior inadvertent write protection
Provides a software method of detecting completion
of program or erase operations
Erase Suspend/Erase Resume
- Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector, then
resumes the erase operation
Package options
- 32-pin DIP, PLCC, TSOP (8mm x 20mm) or sTSOP
(8mm x 14mm)




Pinout






Specifications

Storage Temperature Plastic Packages . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0°C to + 70°C
. . . . . . . . . . . . . . . . . . . . . . for -U series: -45°C to +85°C
Ambient Temperature with Power Applied . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to + 70°C
. . . . . . . . . . . . . . . . . . . . . . for -U series: -45°C to +85°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . .. . . . . . . -0.5V to +4.0V
A9 &OE (Note 2) . . . . . . . . . . . . . . . . . . . . . . -0.5 to +12.5V
All other pins (Note 1) . . . . . . . .. . . . . . -0.5V to VCC + 0.5V
Output Short Circuit Current (Note 3) . . . . . . . . . . . . 200mA

1. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, input or I/O pins may undershoot VSS to -2.0V for periods of up to 20ns. Maximum DC voltage on input and I/O pins is VCC +0.2V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0V for periods up to 20ns. 2. Minimum DC input voltage on A9 and OE is -0.5V. During voltage transitions, A9 andOE may overshoot VSS to -2.0V for periods of up to 20ns. Maximum DC
input voltage on A9 is +12.5V which may overshoot to 14.0V for periods up to 20ns. 3. No more than one output is shorted at a time. Duration of the short circuit should not be greater than one Second.




Description

The A29L040 is a 3.0 volt-only Flash memory organized as 524,288 bytes of 8 bits each. The 512 Kbytes of data are further divided into eight sectors of 64 Kbytes each for flexible sector erase capability. The 8 bits of data appear on I/O0 - I/O7 while the addresses are input on A0 to A18. The A29L040 is offered in 32-pin PLCC, TSOP (8mm x 20mm) or sTSOP (8mm x 14mm) packages. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. Additional 12.0 volt VPP is not required for in-system write or erase operations. However,
the A29L040 can also be programmed in standard EPROM programmers.

The A29L040 has a second toggle bit, I/O2, to indicate whether the addressed sector is being selected for erase, and also offers the ability to program in the Erase Suspend mode. The standard A29L040 offers access times of 70ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE ), write enable (WE ) and output enable (OE ) controls.

The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.

The A29L040 is entirely software command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.

Device A29L040 programming occurs by writing the proper program command sequence. This initiates the Embedded Program algorithm - an internal algorithm that automatically times the program pulse widths and verifies proper program margin. Device erasure occurs by executing the proper erase command sequence. This initiates the Embedded Erase algorithm - an internal algorithm that automatically
preprograms the array (if it is not already programmed)