A29DL323UG-90

 Two bank organization enabling simultaneous execution of erase / program and read
Bank organization: 2 banks (8 Mbits + 24 Mbits)
Memory organization:
- 4,194,304 words x 8 bits (BYTE mode)
- 2,097,152 words x 16 bits (WORD mode)
Sector organization:
71 sectors (8 Kbytes / 4 Kwords * 8 sectors, 64 Kbytes /32 Kwords * 63 sectors)
2 types of sector organization
- T type: Boot sector allocated to the highest address (sector)
- B type: Boot sector allocated to the lowest address(sector)
3-state output
Automatic program
- Program suspend / resume
Unlock bypass program
Automatic erase
- Chip erase
- Sector erase (sectors can be combined freely)
Erase suspend / resume
Program / Erase completion detection
- Detection through data polling and toggle bits
- Detection through RY/BY pin
Sector group protection
- Any sector group can be protected
- Any protected sector group can be temporary
unprotected
Sectors can be used for boot application
Hardware reset and standby using RESET pin
Automatic sleep mode
Boot block sector protect by WP (ACC) pin
Conforms to common flash memory interface (CFI)
Extra One Time Protect Sector provided
Operating ambient temperature: -40 to 85°C
Program / erase time
- Program: 9.0 s / byte (TYP.)11.0 s / word (TYP.)
- Sector erase: 0.7 s (TYP.)
Number of program / erase: 1,000,000 times (MIN.)
Package options
- 48-pin TSOP (I) or 63-ball TFBGA

Storage Temperature (Tstg) . . . . . . ............. ...................................... . . -55 to + 125
Operating Ambient Temperature (TA) . . . ... . ...................................... . . . -40 to + 85
Input / Output Voltage with Respect to GND WP(ACC), RESET . . . . . -0.5V ^Note1 to 13.0V
All Pins except WP(ACC), RESET . . . . . . . . .. . . -0.5V ^Note1 to VCC + 0.4 (4.0V max.) ^Note2
Supply Voltage with Respect to GND(VCC) ... . . . . . .. . . . . . . . . . . . . . . . . . -0.5V to 4.0V

Notes:
1. -2.0V (Min.) (Pulse width 20ns)
2. VCC + 0.5V (Max.) (Pulse width 20ns)

The A29DL323 is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory can be erased at a low voltage (2.7 to 3.6 V) supplied from a single power source, or the contents of the entire chip can be erased.Two modes of memory organization, BYTE mode (4,194,304 words × 8 bits) and WORD mode (2,097,152 words × 16 bits), are selectable so that the memory can be programmed in byte or word units.

The A29DL323 can be read while its contents are being erased or programmed. The memory cell is divided into twobanks. While sectors in one bank are being erased or programmed, data can be read from the other bank thanks to the simultaneous execution architecture. The banks are 8 Mbits and 24 Mbits.

This flash memory A29DL323 comes in two types. The T type has a boot sector located at the highest address (sector) and the B type has a boot sector at the lowest address (sector).Because the A29DL323 enables the boot sector to be erased, it is ideal for storing a boot program. In addition,program code that controls the flash memory can be also stored, and the program code can be programmed or erased without the need to load it into RAM. Eight small sectors for storing parameters are provided, each of which can be erased in 8 Kbytes units.

Once a program or erase command sequence has been executed, an automatic program or automatic erase function internally executes program or erase and verification automatically.

Because the A29DL323 can be electrically erased or programmed by writing an instruction, data can be reprogrammed on-board after the flash memory has been installed in a system, making it suitable for a wide range of applications.