Features: ` 5.0V ± 10% for read and write operations` Access times:- 55/70/90 (max.)` Current:- 20 mA typical active read current- 30 mA typical program/erase current- 1 A typical CMOS standby` Flexible sector architecture- 8 Kbyte/ 4 KbyteX2/ 16 Kbyte/ 32 KbyteX3 sectors- Any combination of s...
A290011L: Features: ` 5.0V ± 10% for read and write operations` Access times:- 55/70/90 (max.)` Current:- 20 mA typical active read current- 30 mA typical program/erase current- 1 A typical CMOS standby` ...
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The A29001 is a 5.0 volt-only Flash memory organized as 131,072 bytes of 8 bits each. The A29001 offers the RESET function, but it is not available on A290011. The 128 Kbytes of data are further divided into seven sectors for flexible sector erase capability. The 8 bits of data appear on I/O0 - I/O7 while the addresses are input on A0 to A16. The A29001 is offered in 32-pin PLCC, TSOP, sTSOP and PDIP packages. This device is designed to be programmed insystem with the standard system 5.0 volt VCC supply.
Additional 12.0 volt VPP is not required for in-system write or erase operations. However, the A29001 can also be programmed in standard EPROM programmers.
The A29001 has the first toggle bit, I/O6, which indicates whether an Embedded Program or Erase is in progress, or it is in the Erase Suspend. Besides the I/O6 toggle bit, the A29001 has a second toggle bit, I/O2, to indicate whether the addressed sector is being selected for erase. The A29001 also offers the ability to program in the Erase Suspend mode. The standard A29001 offers access times of 55, 70 and 90 ns allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE ) and output enable (OE ) controls.
The device A290011L requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.
The A29001 is entirely software command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.
Device A290011L programming occurs by writing the proper program command sequence. This initiates the Embedded Program algorithm - an internal algorithm that automatically times the program pulse widths and verifies proper program margin.
Device A290011L erasure occurs by executing the proper erase command sequence. This initiates the Embedded Erase algorithm - an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper erase margin.
The host system A290011L can detect whether a program or erase operation is complete by reading the I/O7 (Data Polling) and I/O6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.