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A28F400BX-B

Features: x8/x16 Input/Output Architecture A28F400BX-T, A28F400BX-B For High Performance and HighIntegration 16-bit and 32-bit CPUsOptimized High Density Blocked Architecture One 16 KB Protected Boot Block Two 8 KB Parameter Blocks One 96 KB Main Block Three 128 KB Main Blocks Top or Bottom Boot ...

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SeekIC No. : 004260040 Detail

A28F400BX-B: Features: x8/x16 Input/Output Architecture A28F400BX-T, A28F400BX-B For High Performance and HighIntegration 16-bit and 32-bit CPUsOptimized High Density Blocked Architecture One 16 KB Protected Bo...

A28F400BX-B Data Sheet

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Part Number:
A28F400BX-B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

x8/x16 Input/Output Architecture
  A28F400BX-T, A28F400BX-B
  For High Performance and High
Integration 16-bit and 32-bit CPUs
Optimized High Density Blocked
  Architecture
  One 16 KB Protected Boot Block
  Two 8 KB Parameter Blocks
  One 96 KB Main Block
  Three 128 KB Main Blocks
  Top or Bottom Boot Locations
Extended Cycling Capability
  1,000 Block Erase Cycles
Automated Word/Byte Write and Block Erase
  Command User Interface 
  Status Register
  Erase Suspend Capability
SRAM-Compatible Write Interface
Automatic Power Savings Feature
  1 mA Typical ICC Active Current in Static Operation
Very High-Performance Read
  90 ns Maximum Access Time
  45 ns Maximum Output Enable Time
Low Power Consumption
  25 mA Typical Active Read Current
Deep Power-Down/Reset Input
  Acts as Reset for Boot Operations
Automotive Temperature Operation
  b40§C to a125§C
Write Protection for Boot Block
Hardware Data Protection Feature
 Erase/Write Lockout During Power Transitions
Industry Standard Surface Mount Packaging
  JEDEC ROM Compatible 44-Lead PSOP
12V Word/Byte Write and Block Erase
  VPP e 12V g5% Standard
ETOXTM III Flash Technology
  5V Read




Pinout

Connection Diagram


Specifications

Operating Temperature
During Read                                          -40 to + 125
During Block Erase
and Word/Byte Write                                  - 40 to + 125
Temperature Under Bias                             - 40 to + 125
Storage Temperature                                  - 65 to + 150
Voltage on Any Pin
(except VCC, VPP, A9 and RPÝ)
with Respect to GND                                   - 2.0V to a7.0V(2)
Voltage on Pin RPÝ or Pin A9
with Respect to GND                              - 2.0V to a13.5V(2, 3)
VPP Program Voltage with Respect
to GND during Block Erase
and Word/Byte Write                             - 2.0V to a14.0V(2, 3)
VCC Supply Voltage
with Respect to GND                                    - 2.0V to a7.0V(2)
Output Short Circuit Current                                    100 mA(4)


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