97SD3232

Features:

• 1 Gigabit ( 8-Meg X 32-Bit X 4-Banks)
• RAD-PAK^® radiation-hardened against natural space radiation
• Total Dose Hardness:>100 krad (Si), depending upon space mission
• Excellent Single Event Effects:SEL_TH > 85 MeV/mg/cm2 @ 25°C
• JEDEC Standard 3.3V Power Supply
• Clock Frequency: 100 MHz Operation
• Operating tremperature: -55 to +125 °C
• Auto Refresh
• Single pulsed RAS
• 2 Burst Sequence variations
   Sequential (BL =1/2/4/8)
   Interleave (BL = 1/2/4/8)
• Programmable CAS latency: 2/3
• Power Down and Clock Suspend Modes
• LVTTL Compatible Inputs and Outputs
• Package: 132 Lead Quad Stack Pack Flat Package


Pinout




Specifications

PARAMETER	SYMBOL	MAX	UNIT
Voltage on any pin relative to VSS	VIN VOUT	-0.5 to VCC + 0.5 (< 4.6(max))	V
Supply voltage relative to VSS	VCC	-0.5 to +4.6	V
Short circuit output current	IOUT	50	mA
Operating Temperature	TOPR	-55 to +125
Storage Temperature	TSTG	-65 to +150

Description

Maxwell Technologies' Synchronous Dynamic Random Access Memory (SDRAM) 97SD3232 is ideally suited for space applications requiring high performance computing and high density memory storage. As microprocessors increase in speed and demand for higher density memory
escalates, SDRAM 97SD3232 has proven to be the ultimate solution by providing bit-counts up to 1 Gigabits and speeds up to 100 Megahertz. SDRAMs represent a significant advantage in memory technology over traditional DRAMs including the ability to burst data synchronously
at high rates with automatic column-address generation, the ability to interleave between banks masking precharge time.

Maxwell Technologies' patented RAD-PAK^® packaging technology incorporates radiation shielding in the microcircuit package. 97SD3232 eliminates the need for box shielding for a lifetime in orbit or space mission. In a typical GEO orbit, R_AD-P_AK^® provides greater than 100 krads(Si)radiation dose tolerance. 97SD3232 is available with screening up to Maxwell Technologies self-defined Class K.