93AA86

 Single supply operation down to 1.8V
  Low power CMOS technology
   - 1 mA active current typical
   -5 m A standby current (typical) at 3.0V
  ORG pin selectable memory configuration
   - 1024 x 8 or 512 x 16-bit organization
     (93AA76)
   - 2048 x 8 or 1024 x 16-bit organization
    (93AA86)
  Self-timed ERASE and WRITE cycles
  Automatic ERAL before WRAL
  Power on/off data protection circuitry
  Industry standard 3-wire serial I/O
  Device status signal during ERASE/WRITE cycles
  Sequential READ function
  10,000,000 ERASE/WRITE cycles guaranteed
  Data retention > 200 years
  8-pin PDIP/SOIC package
  Temperature ranges available:
    - Commercial (C): 0 C to +70 C

V_CC..................................................................................7.0V
All inputs and outputs w.r.t. V_SS ...............-0.6V to Vcc +1.0V
Storage temperature.....................................-65 to +150

Ambient temp. with power applied.................-65 to +125
Soldering temperature of leads (10 seconds).............+300
ESD protection on all pins................................................4 kV

The Microchip Technology Inc. 93AA76/86 are 8K and 16K low voltage serial Electrically Erasable PROMs. The device memory is configured as x8 or x16 bits
depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low power non-volatile memory applications. These devices also
have a Program Enable (PE) pin to allow the user to write protect the entire contents of the memory array. The 93AA76/86 is available in standard 8-pin DIP and 8-pin surface mount SOIC packages.