93AA76

 Single supply operation down to 1.8V
  Low power CMOS technology
   - 1 mA active current typical
   -5 m A standby current (typical) at 3.0V
  ORG pin selectable memory configuration
   - 1024 x 8 or 512 x 16-bit organization
     (93AA76)
   - 2048 x 8 or 1024 x 16-bit organization
    (93AA86)
  Self-timed ERASE and WRITE cycles
  Automatic ERAL before WRAL
  Power on/off data protection circuitry
  Industry standard 3-wire serial I/O
  Device status signal during ERASE/WRITE cycles
  Sequential READ function
  10,000,000 ERASE/WRITE cycles guaranteed
  Data retention > 200 years
  8-pin PDIP/SOIC package
  Temperature ranges available:
    - Commercial (C): 0 C to +70 C

V_CC..................................................................................7.0V
All inputs and outputs w.r.t. V_SS ...............-0.6V to Vcc +1.0V
Storage temperature.....................................-65 to +150

Ambient temp. with power applied.................-65 to +125
Soldering temperature of leads (10 seconds).............+300
ESD protection on all pins................................................4 kV

The Microchip Technology Inc. 93AA76/86 are 8K and 16K low voltage serial Electrically Erasable PROMs. The 93AA76/86  memory is configured as x8 or x16 bits
depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low power non-volatile memory applications. These devices also
have a Program Enable (PE) pin to allow the user to write protect the entire contents of the memory array. The 93AA76/86 is available in standard 8-pin DIP and 8-pin surface mount SOIC packages.