93AA56

• Single supply with programming operation down to 1.8V
• Low power CMOS technology - 70 mA typical active READ current at 1.8V  - 2 mA typical standby current at 1.8V
• ORG pin selectable memory configuration  - 128 x 8- or 64 x 16-bit organization (93AA46)  - 256 x 8- or 128 x 16-bit organization (93AA56)

   - 512 x 8 or 256 x16 bit organization (93AA66)
• Self-timed ERASE and WRITE cycles (including auto-erase)
• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial I/O
• Device status signal during ERASE/WRITE cycles
• Sequential READ function
• 10,000,000 ERASE/WRITE cycles guaranteed on 93AA56 and 93AA66
• 1,000,000 E/W cycles guaranteed on 93AA46
• Data retention > 200 years
• 8-pin PDIP/SOIC (SOIC in JEDEC and EIAJ standards)
• Temperature ranges supported - Commercial (C):  0 °C to +70°C

VCC ............................................................................ 7.0V
All inputs and outputs w.r.t. VSS.......... -0.6V to VCC +1.0V
Storage temperature.............................-65°C to +150°C
Ambient temp. with power applied........-65°C to +125°C
Soldering temperature of leads (10 seconds).......+300°C
ESD protection on all pins ......................................... 4 kV

The Microchip Technology Inc. 93AA46/56/66 are 1K, 2K and 4K low voltage serial Electrically Erasable PROMs. The 93AA46/56/66 memory is configured as x8 or x16
bits depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low power non-volatile memory applications. The 93AA46/56/66 is available in standard 8-pin DIP and surface mount SOIC packages. The rotated pin-out 93AA46X/56X/66X are offered in the "SN" package only.