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8TT100

Features: • 175 high performance Schottky diode• Very low forward voltage drop• Extremely low reverse leakage• Optimized VF vs. IR trade off for high efficiency• Increased ruggedness for reverse avalanche capability• RBSOA available• Negligible switching ...

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SeekIC No. : 004257876 Detail

8TT100: Features: • 175 high performance Schottky diode• Very low forward voltage drop• Extremely low reverse leakage• Optimized VF vs. IR trade off for high efficiency• Incre...

8TT100 Data Sheet

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Part Number:
8TT100
Supply Ability:
5000

Price Break

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• 175 high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level




Application

• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems




Specifications

PARAMETER
SYMBOL
 TEST CONDITIONS
VALUES
UNITS
Maximum average forward
current
IF(AV)
 50 % duty cycle at TC = 53.4 , rectangular waveform
8
A
Maximum peak one cycle
non-repetitive surge current
IFSM
 5 s sine or 3 s rect. pulse Following any rated load
condition and with rated
VRRM applied
850
10 ms sine or 6 ms rect. pulse
210
Non-repetitive avalanche energy
EAS
 TJ = 25 , IAS = 1.5 A, L = 60 mH
67
mJ
Repetitive avalanche current
IAR
 Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8
IAS at
TJ max.
A





Description

8TT100 high Performance Schottky Generation 5.0, 8 A




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