8TQ100

Series: -
Manufacturer: Vishay Semiconductors
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Mounting Type: Through Hole
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Packaging: Tube
Package / Case: TO-220-2 Fused Center, TO-220AC
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Current - Reverse Leakage @ Vr: 550µA @ 100V


Features:

·175° C T_J operation
·High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
·Low forward voltage drop
·High frequency operation
·Guard ring for enhanced ruggedness and long term reliability


Specifications

Parameters	Value	Units	Conditions
IF(AV)   Max. Average Forward Current             * See Fig. 5	8	A	50% duty cycle @ TC = 157° C, rectangular wave form
IFSM     Max. Peak One Cycle Non- Repetitive Surge Current, @ TJ = 25°C	850	A	5s Sine or 3s Rect. pulse	Following any rated load condition and with rated VRRMapplied
	230		10ms Sine or 6ms Rect. pulse
EAS       Non-Repetitive Avalanche Energy	7.50	mJ	TJ = 25 °C, IAS = 0.50 Amps, L = 60 mH
IAR       Repetitive Avalanche Current	0.50	A	Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. VA = 1.5 x VR typical

Description

The 8TQ Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175° C junction temperature. 8TQ  applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.