Features: • Hyperfast recovery time• Low forward voltage drop• Low leakage current• 175 °C operating junction temperature• Lead (Pb)-free ( PbF suffix)• Designed and qualified for Q101 levelSpecifications PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS ...
8ETH06SPbF: Features: • Hyperfast recovery time• Low forward voltage drop• Low leakage current• 175 °C operating junction temperature• Lead (Pb)-free ( PbF suffix)• Designed...
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PARAMETER | SYMBOL | TEST CONDITIONS | MAX. | UNITS |
Peak repetitive reverse voltage | VRRM | 600 | V | |
Average rectified forward current | IF(AV) | TC = 140 | 8 | A |
Non-repetitive peak surge current | IFSM | TJ = 25 | 90 | |
Peak repetitive forward current | IFM | 16 | ||
Operating junction and storage temperatures | TJ, TStg | - 65 to 175 |
8ETH06SPbF's state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. 8ETH06SPbF is intended for use in PFC boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.
8ETH06SPbF's extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.