8ETH06PBF

Manufacturer: Vishay Semiconductors
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Mounting Type: Through Hole
Capacitance @ Vr, F: -
Voltage - DC Reverse (Vr) (Max): 600V
Reverse Recovery Time (trr): 25ns
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Packaging: Tube
Package / Case: TO-220-2 Fused Center, TO-220AC
Series: FRED Pt™
Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
Current - Reverse Leakage @ Vr: 50µA @ 600V


Features:

• Hyperfast Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current
• 175 Operating Junction Temperature
• 2500V insulation voltage 􀁥
• UL E78996 approved
• Lead-Free ("PbF")


Specifications

	Parameters	Max	Units
VRRM	Peak Repetitive Reverse Voltage	600	V
IF(AV)	Average Rectified Forward Current @ TC = 144 @ TC = 108 (FULLPACK)	8	A
IFSM	Non Repetitive Peak Surge Current @ TJ = 25 (FULLPACK)	90 100
IFM	Peak Repetitive Forward Current	16
TJ,TSTG	Operating Junction and Storage Temperatures	- 65 to 175

Description

8ETH06PbF's state of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast
recover time, and soft recovery.

The planar structure and the platinum doped life time control of 8ETH06PbF guarantee the best overall performance, ruggedness and
reliability characteristics.

8ETH06PbF is intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.

The IR extremely optimized stored charge and low recovery current of 8ETH06PbF minimize the switching losses and reduce over dissipation in the switching element and snubbers.