DIODE SCHOTTKY 150V 40A D61-8
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Features: 175TJ operationCenter tap moduleHigh purity, high temperature epoxy encapsulation for en...
Features: 175TJ operationCenter tap moduleHigh purity, high temperature epoxy encapsulation for en...
Series: | - | Manufacturer: | Vishay Semiconductors | ||
Voltage - Forward (Vf) (Max) @ If: | 990mV @ 40A | Current - Reverse Leakage @ Vr: | 1.5mA @ 150V | ||
Noise Figure : | 0.6 dB | Current - Average Rectified (Io) (per Diode): | 40A | ||
Voltage - DC Reverse (Vr) (Max): | 150V | Reverse Recovery Time (trr): | - | ||
Diode Type: | Schottky | Speed: | Fast Recovery = 200mA (Io) | ||
Diode Configuration: | 1 Pair Common Cathode | Mounting Type: | Chassis Mount | ||
Package / Case: | D-61-8 | Supplier Device Package: | D-61-8 |
Parameters | 89CNQ | Units | Conditions | |
IF(AV) Max. Av. Forward Current (PerLeg) * See Fig. 5 (Per Device ) |
40 | A | 50% duty cycle @ TC = 130° C, rectangular wave form (Rated VR ) | |
80 | ||||
IFSM Max. Peak One Cycle Non- Repetitive Surge Current(Per Leg), See Fig. 7 | 4300 | A | 5s Sine or 3s Rect. pulse | Following any rated load condition and with rated Vr applied |
500 | 10ms Sine or 6ms Rect. pulse | |||
EAS Non-Repetitive Avalanche Energy (Per Leg) | 290 | mJ | TJ = 25 °C, IAS = 1 Amps, L = 18 mH | |
IAR Repetitive Avalanche Current (PerLeg) | 1.0 | A | Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. VA = 1.5 x VR typical |
The 89CNQ...A center tap Schottky rectifier module has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. 89CNQ...A applications are in switching power supplies, converters, free wheeling diodes, and reverse battery protection.