85CNQ015APBF

Series: -
Manufacturer: Vishay Semiconductors
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Reverse Recovery Time (trr): -
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io) (per Diode): 40A
Mounting Type: Chassis Mount
Package / Case: D-61-8
Supplier Device Package: D-61-8
Packaging: Bulk
Current - Reverse Leakage @ Vr: 20mA @ 15V
Voltage - Forward (Vf) (Max) @ If: 450mV @ 80A


Features:

·125°C T_J operation (V_R < 5V)
·Center tap module
·Optimized for OR-ing applications
·Ultra low forward voltage drop
·High frequency operation
·Guard ring for enhanced ruggedness and long term reliability
·High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
·New fully transfer-mold low profile, small footprint, high current package
·Through-hole versions are currently available for use in
·Lead-Free applications ("PbF" suffix)




Specifications

Parameters		85CNQ	Units	Conditions
I F(AV)	Max. Average Forward Current * See Fig. 5	80	A	50% duty cycle @ TC = 78 , rectangular wave form
IFSM	Max. Peak One Cycle Non-Repetitive Surge Current (Per Leg) * See Fig. 7	5200	A	5s Sine or 3s Rect. pulse	load condition and with rated VRRM applied
		850		10ms Sine or 6ms Rect. pulse
EAS	Non-Repetitive Avalanche Energy (Per Leg)	9	mJ	TJ = 25 , IAS = 2 Amps, L = 4.50 mH
IAR	Repetitive Avalanche Current (Per Leg)	2	A	Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 3 x VR typical

Description

The 85CNQ015APbF center tap Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. 85CNQ015APbF applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems.

85CNQ015APbF Schottky Rectifier/rNew Generation 3 D-61 Package, 2 x 40 A