Series: -
Manufacturer: Vishay Semiconductors
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Reverse Recovery Time (trr): -
Mounting Type: Through Hole
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 150V
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Current - Average Rectified (Io) (per Diode): 40A
Voltage - Forward (Vf) (Max) @ If: 860mV @ 40A
Current - Reverse Leakage @ Vr: 200µA @ 150V
Features: `175 TJ operation
`Center tap TO-247 package
`High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
`Low forward voltage drop
`High frequency operation
`Guard ring for enhanced ruggedness and long term reliability
`Lead-Free ("PbF" suffix)Specifications
|
Parameters |
80CPQ |
Units |
Conditions |
|
IF(AV) Max. Average Forward
Current * See Fig. 5 |
Per Device |
80 |
A |
50% duty cycle @ TC = 150, rectangular wave form |
|
Per Leg |
40 |
|
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current (Per Leg) * See Fig. 7 |
1930 |
A |
5s Sine or 3s Rect. pulse |
Following any rated
load condition and with
rated VRRM applied |
|
500 |
10ms Sine or 6ms Rect. pulse |
|
EAS Non-Repetitive Avalanche Energy
(Per Leg) |
0.5 |
mJ |
TJ = 25 , IAS = 1.0 Amps, L = 1 mH |
|
IAR Repetitive Avalanche Current
(Per Leg) |
1.0 |
A |
Current decaying linearly to zero in 1 sec
Frequency limited by TJ max. VA = 1.5 x VR typical |
DescriptionThe 80CPQ150PbF center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 junction temperature. 80CPQ150PbF applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
80CPQ150PBF Data Sheet
