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8050SS

Features: `Power dissipationPCM : 1 W (Tamb=25)`Collector currentICM: 1.5 A`Collector-base voltageV(BR)CBO : 40 V`Operating and storage junction temperature rangeTJ,Tstg: -55 to +150Specifications Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltag...

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8050SS: Features: `Power dissipationPCM : 1 W (Tamb=25)`Collector currentICM: 1.5 A`Collector-base voltageV(BR)CBO : 40 V`Operating and storage junction temperature rangeTJ,Tstg: -55 to +150Specifications ...

8050SS Data Sheet

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Part Number:
8050SS
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Power dissipation
PCM : 1 W (Tamb=25)
`Collector current
ICM: 1.5 A
`Collector-base voltage
V(BR)CBO : 40 V
`Operating and storage junction temperature range
TJ,Tstg: -55 to +150




Specifications

Parameter
Symbol
Test conditions
 MIN TYP MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 A , IE=0
 40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 0.1 mA , IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 A, IC=0
5
V
Collector current
ICBO
VCB= 40 V , IE=0
0.1
A
Collector cut-off current
ICEO
VCE= 20 V , IB=0
0.1
A
Emitter cut-off current
IEBO
VEB= 5 V , IC=0
0.1
A
DC current gain
hFE(1)
hFE(2)
VCE= 1 V , IC= 100 mA
VCE= 1 V , IC=800 mA
85
40
300
Collector-emitter saturation voltage
VCE(sat)
IC= 800 mA, IB= 80 mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= 800mA, IB= 80 mA
1.2
V
Transition frequency
f T
VCE= 10 V, IC= 50mA
f =30 MHz
100
MHz





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