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7N70

Features: * RDS(ON) = 1.5 @VGS = 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer capacitance ( CRSS = typical 18 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggednessSpecifications Parameter Symbol Rating Unit D...

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SeekIC No. : 004253327 Detail

7N70: Features: * RDS(ON) = 1.5 @VGS = 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer capacitance ( CRSS = typical 18 pF )* Fast switching capability* Avalanche energy specified* Impr...

7N70 Data Sheet

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Part Number:
7N70
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

* RDS(ON) = 1.5 @VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 18 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


Specifications

Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current TC = 25
ID
7.0
A
TC = 100
4.7
A
Drain Current Pulsed (Note 1)
IDM
28
A
Avalanche Energy, Single Pulsed (Note 2)
EAS
530
mJ
Avalanche Energy, Repetitive, Limited by TJMAX
EAR
14.2
mJ
k Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Power Dissipation (TC = 25)
PD
142
W
Operating Junction and Storage Temperature Range
Tj
+150
Maximum Junction-to-Ambient*
TSTG
-55 ~ +150
/W



Description

The UTC 7N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET 7N70 is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.




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