Specifications Item Symbol Condition MaximumRatings Unit Inverter Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current IC Continuous Tc=25°C 100 A Tc=80°C 75 ICP 1ms Tc=25°C 200 ...
7MBR100U4B120: Specifications Item Symbol Condition MaximumRatings Unit Inverter Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current...
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Features: * NPT-Technology* Solderable Package* Square SC SOA at 10 x IC* High Short Circuit Withs...
Features: · Low VCE(sat)· Compact package· P.C. board mount· Converter diode bridge, Dynamic brake...
Features: · Low VCE(sat)· Compact Package· P.C. Board Mount Module· Converter Diode Bridge Dynamic...
| Item | Symbol |
Condition |
Maximum Ratings |
Unit | ||
| Inverter | Collector-Emitter voltage | VCES |
1200 |
V | ||
| Gate-Emitter voltage | VGES |
±20 |
V | |||
| Collector current | IC |
Continuous |
Tc=25°C |
100 |
A | |
|
Tc=80°C |
75 | |||||
| ICP |
1ms |
Tc=25°C |
200 | |||
|
Tc=80°C |
150 | |||||
| -IC |
100 |
|||||
| -Ic pulse |
1ms |
200 |
A | |||
| Collector power disspation | PC | 1 device |
390 |
W | ||
| Brake | Collector-Emitter voltage | VCES |
1200 |
V | ||
| Gate-Emitter voltage | VGES |
±20 |
V | |||
| Collector current | IC |
Continuous |
Tc=25°C |
50 |
A
| |
|
Tc=80°C |
35 | |||||
| ICP |
1ms |
Tc=25°C |
100 | |||
|
Tc=80°C |
70 | |||||
| Collector power disspation | PC | 1 device |
205 |
W | ||
| Repetitive peak reverse voltage(Diode) | VRRM |
1200 |
V | |||
| Converter | Repetitive peak reverse voltage | VRRM |
1600 |
V | ||
| Average output current | IO | 50Hz/60Hz sine wave |
100 |
A | ||
| Surge current (Non-Repetitive) | IFSM | Tj=150°C, 10ms half sine wave |
520 |
A | ||
| I2t (Non-Repetitive) | 12t |
1352 |
A2S | |||
| Junction temperature | Tj |
+150 |
||||
| Storage temperature | Tstg | -40 ~ +125 | ||||
| Screw Torque |
between terminal and copper base (*1) | Viso | AC : 1min. |
2500 |
VAC | |
| between thermistor and others (*2) | ||||||
| Mounting (*3) | - |
3.5 |
V | |||