74V1T79

PinoutSpecifications Symbol Parameter Value Units VCC Supply Voltage -0.5 to +7.0 V VI DC Input Voltage -0.5 to +7.0 V VO DC Output Voltage -0.5 to VCC + 0.5 V IIK DC Input Diode Current - 20 mA IOK DC Output Di...

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74V1T79 Picture
SeekIC No. : 004251747 Detail

74V1T79: PinoutSpecifications Symbol Parameter Value Units VCC Supply Voltage -0.5 to +7.0 V VI DC Input Voltage -0.5 to +7.0 V VO DC Output Voltage ...

floor Price/Ceiling Price

Part Number:
74V1T79
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Pinout

  Connection Diagram


Specifications

Symbol

Parameter

Value

Units

VCC

Supply Voltage

-0.5 to +7.0

V

VI

DC Input Voltage

-0.5 to +7.0

V

VO

DC Output Voltage

-0.5 to VCC + 0.5

V

IIK

DC Input Diode Current

- 20

mA

IOK

DC Output Diode Current

- 20

mA

IO

DC Output Current

± 25

mA

ICC or IGND

DC VCC or Ground Current

± 50

mA

Tstg

Storage Temperature

-65 to +150

°C

TL

Lead Temperature (10 sec)

300

°C




Description

The 74V1T79 is an advanced high-speed CMOS SINGLE POSITIVE EDGE TRIGGERED D-TYPE FLIP-FLOP fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is designed to operate from 4.5V to 5.5V, making this device ideal for portable applications.

This D-Type flip-flop is controlled by a clock input (CK). On the positive transition of the clock, the Q output will be set to the logic state that was setup at the D input.

Following the hold time interval, data at the D input can be changed without affecting the level at the output. Power down protection is provided on inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V systems.

It's available in the commercial and extended temperature range.

All inputs and output of the 74V1T79 are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage.




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