74V1G32

` HIGHSPEED: t<sub>PD</sub> = 3.8 ns (TYP.) at V<sub>CC</sub>= 5V
` LOWPOWERDISSIPATION: I_CC =2 mA (MAX.) at T_A =25
` HIGHNOISEIMMUNITY: V<sub>NIH</sub>=V<sub>NIL</sub> =28% V<sub>CC</sub> (MIN.)
` POWERDOWN PROTECTIONON INPUTS
` SYMMETRICAL OUTPUT IMPEDANCE: |I<sub>OH</sub>| = I<sub>OL</sub> = 8 mA(MIN)
` BALANCEDPROPAGATIONDELAYS: t_PLH @ t_PHL
` OPERATINGVOLTAGERANGE: V<sub>CC</sub> (OPR)= 2V to 5.5V
` IMPROVEDLATCH-UP IMMUNITY

AbsoluteMaximumRatingsarethose values beyond whichdamage to the device may occur. Functional operation
under these condition isnot implied.

The 74V1G32 is an advanced high-speed CMOS SINGLE 2-INPUT OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C²MOS technology.

The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output.

Power down protection of the 74V1G32 is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.