74V1G08

Features:

 HIGHSPEED: tPD = 4.3 ns (TYP.) atV_CC= 5V
  LOWPOWERDISSIPATION:I_CC =1 mA (MAX.) at TA =25 oC
  HIGHNOISEIMMUNITY:VNIH=VNIL =28%V_CC (MIN.)
  POWERDOWN PROTECTIONON INPUTS
  SYMMETRICAL OUTPUT IMPEDANCE: |I_OH| = I_OL = 8 mA(MIN)
  BALANCEDPROPAGATIONDELAYS:t_PLH  t_PHL
  OPERATINGVOLTAGERANGE:V_CC (OPR)= 2V to 5.5V
  IMPROVEDLATCH-UP IMMUNITY



Pinout




Specifications

Symbol	Parameter	Value	Unit
VCC	Supply Voltage	-0.5 to +7.0	V
VI	DC Input Voltage	-0.5 to +7.0	V
VO	DC Output Voltage	-0.5 to VCC + 0.5	V
IIK	DC Input Diode Current	- 20	mA
IOK	DC Output Diode Current	± 20	mA
IO	DC Output Current	± 25	mA
ICC or IGND	DC VCC or Ground Current	± 50	mA
Tstg	Storage Temperature	-65 to +150	oC
TL	Lead Temperature (10 sec)	260	oC

Description

   The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C²MOS technology.

   The internal circuit of the 74V1G08 is composed of 2 stages including buffer output, which provide high noise immunity and stable output.

   Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. The 74V1G08 can be used to interface 5V to 3V.