74LCXH32245

Features:

·5V tolerant inputs and outputs
·2.3V to 3.6V VCC specifications provided
·4.5 ns tPD max (VCC = 3.3V), 20 µA ICC max
·Power-off high impedance inputs and outputs
·Bushold on inputs eliminates the need for external pull-up/down resistors
·Supports live insertion/withdrawal (Note 1)
·±24 mA output drive (VCC = 3.0V)
·Uses patented noise/EMI reduction circuitry
·Latch-up performance exceeds 500 mA
·ESD performance:Human body model > 2000V Machine model > 200V
·Packaged in plastic Fine-Pitch Ball Grid Array (FBGA)


Pinout




Specifications

Symbol	Parameter	Value	Conditions	Unit
VCC	Supply Voltage	−0.5 to +7.0		V
VI	T/R, OE I/O Ports	−0.5 to +7.0 −0.5 to VCC + 0.5	Output in 3-STATE Output in HIGH or LOW State (Note 5)	V
VO	DC Output Voltage	−0.5 to +7.0 −0.5 to VCC + 0.5	VI < GND	V
IIK	DC Input Diode Current	- 50	VO < GND VO > VCC	mA
IOK	DC Output Diode Current	−50 +50		mA
IO	DC Output Source/Sink Current	± 50		mA
ICC	DC Supply Current per Supply Pin	± 100		mA
IGND	DC Ground Current per Ground Pin	± 100		mA
TSTG	Storage Temperature	-65 to +150		°C

Description

The 74LCXH32245 contains thirty-two non-inverting bidirectional buffers with 3-STATE outputs and is intended for bus oriented applications. The device is designed for low voltage(2.5V or 3.3V) VCC applications with capability of interfacing to a 5V signal environment. The device is byte controlled. Each byte has separate control inputs which could be shorted together for full 32-bit operation. The T/R inputs of the 74LCXH32245 determine the direction of data flow through the device. The OE inputs disable both the A and B ports by placing them in a high impedance state.

The 74LCXH32245 data inputs include bushold, eliminating the need for external pull-up/down resistors to hold unused inputs.

The 74LCXH32245 is fabricated with an advanced CMOS technology to achieve high speed operation while maintaining CMOS low power dissipation.