Features: • DRAM signal timing generator• Automatic refresh circuitry• Selectable row address hold and RAS precharge times• Facilitates page mode accesses• Controls 1 MBit DRAMs• Intelligent burst-mode refresh after page-mode access cyclesPinoutSpecifications ...
74F1763: Features: • DRAM signal timing generator• Automatic refresh circuitry• Selectable row address hold and RAS precharge times• Facilitates page mode accesses• Controls 1 M...
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SYMBOL |
PARAMETER |
RATING |
UNIT |
VCC |
Supply voltage |
0.5 to +7.0 |
V |
VIN |
Input voltage |
0.5 to +7.0 |
V |
IIN |
Input current |
30 to +5 |
mA |
VOUT |
Voltage applied to output in High output state |
0.5 to +VCC |
V |
IOUT |
Current applied to output in Low output state |
120 |
mA |
TA |
Operating free-air temperature range |
0 to +70 |
|
TSTG |
Storage temperature |
65 to +150 |
The Philips Semiconductors Intelligent Dynamic RAM Controller of the 74F1763 is a 1 MBit, single-port version of the 74F1764 Dual Port Dynamic RAM Controller. It contains automatic signal timing, address multiplexing and refresh control required for interfacing with dynamic RAMs. Additional features have been added to this device to take advantage of technological advances in Dynamic RAMs. A Page-Mode access pin allows the user to assert RAS for the entire access cycle rather than the pre-defined four-clock-cycle pulse width used for normal random access cycles. In addition, the user of the 74F1763 has the ability to select theRAS precharge time and Row-Address Hold time to fit the particular DRAMs being used. DTACK has been modified from previous family parts to become a negative true, tri-stated
output. The options for latched or unlatched address are contained on a single device by the addition of an Address Latch Enable (ALE) input. Finally, a burst refresh monitor of the 74F1763 has been added to ensure complete refreshing after length page-mode access cycles. With a maximum clock frequency of 100 MHz, the F1763 is capable of controlling DRAM arrays with access times down to 40 nsec.