74AUP1Z04

Features: `Wide supply voltage range from 0.8 V to 3.6 V`High noise immunity`ESD protection:`HBM JESD22-A114D Class 3A exceeds 5000 V`MM JESD22-A115-A exceeds 200 V`CDM JESD22-C101C exceeds 1000 V`Low static power consumption; ICC = 0.9 mA (maximum)`Latch-up performance exceeds 100 mA per JESD 78 ...

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SeekIC No. : 004249546 Detail

74AUP1Z04: Features: `Wide supply voltage range from 0.8 V to 3.6 V`High noise immunity`ESD protection:`HBM JESD22-A114D Class 3A exceeds 5000 V`MM JESD22-A115-A exceeds 200 V`CDM JESD22-C101C exceeds 1000 V`L...

floor Price/Ceiling Price

Part Number:
74AUP1Z04
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

`Wide supply voltage range from 0.8 V to 3.6 V
`High noise immunity
`ESD protection:
`HBM JESD22-A114D Class 3A exceeds 5000 V
`MM JESD22-A115-A exceeds 200 V
`CDM JESD22-C101C exceeds 1000 V
`Low static power consumption; ICC = 0.9 mA (maximum)
`Latch-up performance exceeds 100 mA per JESD 78 Class II
`Inputs accept voltages up to 3.6 V
`Low noise overshoot and undershoot < 10 % of VCC
`IOFF circuitry provides partial Power-down mode operation at output Y
`Multiple package options
`Specified from -40 to +85 and -40 to +125



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
-0.5
+4.6
V
IIK
input clamping current
VI < 0 V
-50
mA
VI
input voltage
[1] -0.5
+4.6
V
IOK
output clamping current
VO > VCC or VO < 0 V
±50
mA
VO
output voltage
[1] -0.5
VCC + 0.5
V
IO
output current
VO = 0 V to VCC
±20
mA
ICC
supply current
+50
mA
IGND
ground current
-50
mA
Tstg
storage temperature
-65
+150
Ptot
total power dissipation
Tamb = -40 to +125
[2]
250
mW

[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are  bserved.
[2] For SC-88 packages: above 87.5 the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 packages: above 45 the value of Ptot derates linearly with 2.4 mW/K.




Description

The 74AUP1Z04 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.

The 74AUP1Z04 combines the functions of the 74AUP1GU04 and 74AUP1G04 with enable circuitry and an internal bias resistor to provide a device optimized for use in crystal oscillator applications.

The 74AUP1Z04 ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.

The 74AUP1Z04 is fully specified for partial power-down applications using IOFF at output Y. The IOFF circuitry disables the output Y, preventing the damaging backflow current through the device when it is powered down.

When not in use the EN input of the 74AUP1Z04 can be driven HIGH, pulling up the X1 input and putting the device in a low power disable mode. Schmitt-trigger action at theEN input makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.

The integration of the two devices into the 74AUP1Z04 produces the benefits of a compact footprint, lower power dissipation and stable operation over a wide range of frequency and temperature.




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