Features: · Wide supply voltage range from 0.8 V to 3.6 V· High noise immunity· ESD protection:· HBM JESD22-A114-C exceeds 2000 V· MM JESD22-A115-A exceeds 200 V· CDM JESD22-C101-C exceeds 1000 V· Low static power consumption; ICC = 0.9 mA (maximum)· Latch-up performance exceeds 100 mA per JESD 78...
74AUP1GU04: Features: · Wide supply voltage range from 0.8 V to 3.6 V· High noise immunity· ESD protection:· HBM JESD22-A114-C exceeds 2000 V· MM JESD22-A115-A exceeds 200 V· CDM JESD22-C101-C exceeds 1000 V· L...
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Symbol | Parameter | MIN | MAX | Units | |
VCC | Supply voltage | -0.5 | 4.6 | V | |
VI | Input voltage range(2) | -0.5 | 4.6 | V | |
VO | output voltage | active mode | -0.5 | VCC + 0.5 | V |
Power-down mode | |||||
IIK | Input clamp current | VI < 0V | -50 | mA | |
IOK | Output clamp current | VO > VCC or VO < 0 V | ±50 | mA | |
IO | Continuous output current | ±20 | mA | ||
ICC | Continuous current through VCC or GND | +50 | mA | ||
IGND | ground current | -50 | mA | ||
Ptot | total power Tamb = -40 °C to +125 °C dissipation |
250 | mW | ||
TSTG | Package thermal impedance(3) | DBV package | -65 | +150 | °C |
The 74AUP1GU04 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible families.
This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
The 74AUP1GU04 provides the single unbuffered inverting gat