Features: Wide supply voltage range from 0.8 V to 3.6 V High noise immunity ESD protection:HBM JESD22-A114-C Class 3A. Exceeds 5000 V MM JESD22-A115-A exceeds 200 V CDM JESD22-C101-C exceeds 1000 V Low static power consumption; ICC = 0.9 mA (maximum) Latch-up performance exceeds 100 mA per JESD 7...
74AUP1G57: Features: Wide supply voltage range from 0.8 V to 3.6 V High noise immunity ESD protection:HBM JESD22-A114-C Class 3A. Exceeds 5000 V MM JESD22-A115-A exceeds 200 V CDM JESD22-C101-C exceeds 1000 V...
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The 74AUP1G57 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.
The 74AUP1G57 ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
The 74AUP1G57 is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.
The 74AUP1G57 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND, NOR, XNOR, inverter and buffer. All inputs can be connected to VCC or GND. Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.
The inputs switch of the 74AUP1G57 at different points for positive and negative-going signals. The difference between the positive voltage VT+ and the negative voltage VT- is defined as the input hysteresis voltage VH.