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74ALVT16344

Features: Multiple VCC and GND pins minimize switching noise5V I/O CompatibleLive insertion/extraction permitted3-State output buffersPower-up 3-StateOutput capability: +64mA/-32mALatch-up protection exceeds 500mA per Jedec JC40.2 Std 17ESD protection exceeds 2000 V per MIL STD 883 Method 3015and ...

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74ALVT16344: Features: Multiple VCC and GND pins minimize switching noise5V I/O CompatibleLive insertion/extraction permitted3-State output buffersPower-up 3-StateOutput capability: +64mA/-32mALatch-up protectio...

74ALVT16344 Data Sheet

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Part Number:
74ALVT16344
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Total Cost: $ 0.00

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Product Details

Description



Features:

Multiple VCC  and GND pins minimize switching noise
5V I/O Compatible
Live insertion/extraction permitted
3-State output buffers
Power-up 3-State
Output capability: +64mA/-32mA
Latch-up protection exceeds 500mA per Jedec JC40.2 Std 17
ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model


Application

      Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.




Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS RATING UNIT
VCC DC supply voltage   -0.5 to +4.6 V
IIK DC input diode current VI < 0 -50 mA
VI DC input voltage3   -0.5 to +7.0 V
IOK DC output diode current VO < 0 -50 mA
VOUT DC output voltage3 Output in Off or High state -0.5 to +7.0 V
IOUT DC output current Output in Low state 128 mA
Output in High state -64
Tstg Storage temperature range   -65 to +150 °C



Description

      The 74ALVT16344 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and  high output drive. It is designed for VCC operation at 2.5V or 3.3V with I/O compatibility to 5V.

      The 74ALVT16344 is a 1-to-4 address driver used in applications where four separate memory locations must be addressed by a single address.




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