Features: Compatible with PC100 and PC133 DIMM module specifications1.65V to 3.6V VCC supply operation3.6V tolerant inputs and outputstPD (CLK to On) 3.7 ns max for 3.0V to 3.6V VCC 4.9 ns max for 2.3V to 2.7V VCC 8.8 ns max for 1.65V to 1.95V VCCPower-off high impedance inputs and outputsSupports...
74ALVC16839: Features: Compatible with PC100 and PC133 DIMM module specifications1.65V to 3.6V VCC supply operation3.6V tolerant inputs and outputstPD (CLK to On) 3.7 ns max for 3.0V to 3.6V VCC 4.9 ns max for 2...
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Buffers & Line Drivers 16-Bit Buffer/Driver With 3-State Outputs
Compatible with PC100 and PC133 DIMM module specifications
1.65V to 3.6V VCC supply operation
3.6V tolerant inputs and outputs
tPD (CLK to On)
3.7 ns max for 3.0V to 3.6V VCC
4.9 ns max for 2.3V to 2.7V VCC
8.8 ns max for 1.65V to 1.95V VCC
Power-off high impedance inputs and outputs
Supports live insertion and withdrawal (Note 1)
Uses patented noise/EMI reduction circuitry
Latchup conforms to JEDEC JED78
ESD performance:
Human body model > 2000V
Machine model > 200V
Supply Voltage (VCC) | −0.5V to +4.6V |
DC Input Voltage (VI) | −0.5V to 4.6V |
Output Voltage (VO) (Note 3) | −0.5V to VCC +0.5V |
DC Input Diode Current (IIK) | |
VI < 0V | −50 mA |
DC Output Diode Current (IOK) | |
VO < 0V | −50 mA |
DC Output Source/Sink Current | |
(IOH/IOL) | ±50 mA |
DC VCC or GND Current per | |
Supply Pin (ICC or GND) | ±100 mA |
Storage Temperature Range (TSTG) | −65 to +150 |
The 74ALVC16839 contains twenty non-inverting selectable buffered or registered paths. The device can be configured to operate in a registered, or flow through buffer mode by utilizing the register enable (REGE) and Clock (CLK) signals. The device operates in a 20-bit word wide mode. All outputs can be placed into 3-STATE through use of the OE pin. These devices are ideally suited for buffered or registered 168 pin and 200 pin SDRAM DIMM memory modules.
The 74ALVC16839 is designed for low voltage (1.65V to 3.6V) VCC applications with I/O compatibility up to 3.6V.
The 74ALVC16839 is fabricated with an advanced CMOS technology to achieve high speed operation while maintaining low CMOS power dissipation.