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74AHCT30

Features: · ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V· Balanced propagation delays· Inputs accept voltages higher than VCC· For AHC only: operates with CMOS input levels· For AHCT only: operates with TTL input levels·...

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SeekIC No. : 004249246 Detail

74AHCT30: Features: · ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V· Balanced propagation delays· Inputs accept voltages higher tha...

74AHCT30 Data Sheet

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Part Number:
74AHCT30
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Description



Features:

· ESD protection:
    HBM EIA/JESD22-A114-A exceeds 2000 V
    MM EIA/JESD22-A115-A exceeds 200 V
    CDM EIA/JESD22-C101 exceeds 1000 V
· Balanced propagation delays
· Inputs accept voltages higher than VCC
· For AHC only: operates with CMOS input levels
· For AHCT only: operates with TTL input levels
· Output capability: standard
· ICC category: SSI
· Specified from -40 to +85 °C and -40 to +125 °C.


Pinout

Connection Diagram


Specifications

SYMBOL
 PARAMETER CONDITIONS
RATING
UNIT
VCC
 DC supply voltage  
0.5 to +7.0
V
VI
 input voltage  
0.5 to +7.0
V
LIK
 DC input diode current VI < -0.5 V; note 1
-20
mA
IOK
 DC output diode current VO < -0.5 V or VO > VCC + 0.5 V; note 1
±20
mA
IO
 DC output source or sink current -0.5 V < VO < VCC + 0.5 V
±25
mA
ICC
 DC VCC or GND current  
±75
mA
Tstg
 storage temperature  
-65to+150
PD
 power dissipation per package
 for temperature range from
-40 to +125 °C; note 2
-500
m/W



Description

The 74AHCT30 are high-speed Si-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A.

The 74AHCT30 provide the 8-input NAND function.




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