74AHCT2G08 Selling Leads, Price trend, 74AHCT2G08 DataSheet download, circuit diagram from SeekIC.com

Features: Symmetrical output impedanceHigh noise immunityESD protection: HBM EIA/JESD22-A114-B exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.Low power dissipationBalanced propagation delaysMultiple package optionsSpecified from -40 °C to +80 °C and from -40 °...

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SeekIC No. : 004249241 Detail

74AHCT2G08: Features: Symmetrical output impedanceHigh noise immunityESD protection: HBM EIA/JESD22-A114-B exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.Low power dissipat...

74AHCT2G08 Data Sheet

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Part Number:: 74AHCT2G08
Supply Ability:: 5000

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1~5000

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15 Days

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Upload time: 2024/5/22

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Gates (AND / NAND / OR / NOR) 5V QUAD 2-INPUT NAND
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Product Details

Description

Features:

Symmetrical output impedance
High noise immunity
ESD protection:
   HBM EIA/JESD22-A114-B exceeds 2000 V
   MM EIA/JESD22-A115-A exceeds 200 V
   CDM EIA/JESD22-C101 exceeds 1000 V.
Low power dissipation
Balanced propagation delays
Multiple package options
Specified from -40 °C to +80 °C and from -40 °C to +125 °C.

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
V_CC	supply voltage		-0.5	+7.0	V
V_I	input voltage		-0.5	+7.0	V
I_IK	input diode current	V_I< -0.5 V	-	-20	mA
I_OK	output diode current	V_O> -0.5V or V_O> V_CC +0.5 V[1]	-	±20	mA
I_O	output source or sink current	V_O> -0.5 V and V_O< V_CC + 0.5 V	-	±25	mA
I_CC, I_GND	V_CC or GND current		-	±75	mA
T_stg	storage temperature		-65	+150	°C
P_tot	power dissipation	Tamb = -40 °C to +125 °C	-	250	mW

[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

Description

The 74AHCT2G08 is a high-speed Si-gate CMOS device.

The 74AHCT2G08 provides two 2-input AND gates.

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74AHCT2G08

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