Features: ` Very low ON-resistance: 26W (typical) at VCC = 3.0 V 16W (typical) at VCC = 4.5 V 14W (typical) at VCC = 5.5 V.` ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.` High noise immunity` Low power dissipation` Bala...
74AHCT1G66: Features: ` Very low ON-resistance: 26W (typical) at VCC = 3.0 V 16W (typical) at VCC = 4.5 V 14W (typical) at VCC = 5.5 V.` ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A...
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SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
VCC | supply voltage | -0.5 | +7.0 | V | |
IIK | input diode current | VI < -0.5 V or VI > VCC + 0.5 V | - | -20 | mA |
ISK | switch diode current | VS < -0.5 V or VS > VCC + 0.5 V | - | ±20 | mA |
IS | switch source or sink current | -0.5 V < VO < VCC + 0.5 V | - | ±25 | mA |
ICC, IGND | VCC or GND current | VCC or GND current | ±75 | mA | |
Tstg | storage temperature | -65 | +150 | °C | |
PD | power dissipation per package | for temperature range from -40 to +125 °C | - | 250 | mW |
The 74AHCT1G66 is a high-speed Si-gate CMOS device.
The 74AHCT1G66 provides an analog switch.
The switch of the 74AHCT1G66 has two input/output pins (Y and Z) and an active HIGH enable input pin (E). When pin E is LOW, the
analog switch is turned off.