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74AHCT1G14

Features: ` Symmetrical output impedance` High noise immunity` ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.` Low power dissipation` Balanced propagation delays` Very small 5 pin package` Output capability: standard` Spe...

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SeekIC No. : 004249229 Detail

74AHCT1G14: Features: ` Symmetrical output impedance` High noise immunity` ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.` Low power ...

74AHCT1G14 Data Sheet

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Part Number:
74AHCT1G14
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Description



Features:

` Symmetrical output impedance
` High noise immunity
` ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V.
` Low power dissipation
` Balanced propagation delays
` Very small 5 pin package
` Output capability: standard
` Specified from -40 to +125 °C.


Application

· Wave and pulse shapers
· Astable multivibrators
· Monostable multivibrators.


Pinout

Connection Diagram


Specifications

SYMBOL
 PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VCC
 supply voltage  
-0.5
+7.0
V
VI
 input voltage  
-0.5
+7.0
V
LIK
 input diode current VI < -0.5 V; note 1
-
-20
mA
IOK
 output diode current VO < -0.5 V or VO > VCC + 0.5 V; note 1
-
±20
mA
IO
 output source or sink current -0.5 V < VO < VCC + 0.5 V
-
±25
mA
ICC
 DVCC or GND current  
-
±75
mA
Tstg
 storage temperature  
-65
±150
PD
 power dissipation per package for temperature range from -40 to +125 °C;
-
250
m/W



Description

The 74AHCT1G14 is a high-speed Si-gate CMOS device.

The 74AHCT1G14 provides the inverting buffer function with Schmitt-trigger action. These devices are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.




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