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74AHCT1G125

Features: ` Symmetrical output impedance` High noise immunity` ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.` Low power dissipation` Balanced propagation delays` Very small 5-pin package` Output capability: standard` Spe...

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SeekIC No. : 004249227 Detail

74AHCT1G125: Features: ` Symmetrical output impedance` High noise immunity` ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.` Low power ...

74AHCT1G125 Data Sheet

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Part Number:
74AHCT1G125
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

` Symmetrical output impedance
` High noise immunity
` ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V.
` Low power dissipation
` Balanced propagation delays
` Very small 5-pin package
` Output capability: standard
` Specified from -40 to +125 °C.




Pinout

Connection Diagram

Connection Diagram




Specifications

SYMBOL
 PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VCC
 supply voltage
-0.5
+7.0
V
VI
 input voltage
-0.5
+7.0
V
LIK
 input diode current VI < -0.5 V; note 1
-
-20
mA
IOK
 output diode current VO < -0.5 V or VO > VCC + 0.5 V; note 1
-
±20
mA
IO
 output source or sink current -0.5 V < VO < VCC + 0.5 V
-
±25
mA
ICC
 DVCC or GND current
-
±75
mA
Tstg
 storage temperature
-65
±150
PD
 power dissipation per package for temperature range from -40 to +125 °C;
-
250
m/W





Description

The 74AHCT1G125 is designed as one kind of high-speed Si-gate CMOS device that provides one non-inverting buffer/line driver with 3-state output. Features of the 74AHCT1G125 are:(1)Symmetrical output impedance;(2)High noise immunity;(3)Low power dissipation;(4)Balanced propagation delays;(5)Very small 5-pin package;(6)Output capability: standard;(7)Specified from -40 to +125 °C.

The absolute maximum ratings of the 74AHCT1G125 can be summarized as:(1)supply voltage: -0.5 to +7.0 V;(2)input voltage: -0.5 to +7.0 V;(3)input diode current: -20 mA;(4)output diode current: ±20 mA;(5)output source or sink current: ±25 mA;(6)VCC or GND current: ±75 mA;(7)storage temperature: -65 to +150 °C;(8)power dissipation per package (for temperature range from -40 to +125 °C): 250 mW. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .



The 74AHCT1G125 is a high-speed Si-gate CMOS device.

The 74AHCT1G125 provides one non-inverting buffer/line driver with 3-state output. The 3-state output iscontrolled by the output enable input (OE). A HIGH at OEcauses the output to assume a high-impedance OFF-state.






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