74AHCT1G125

The 74AHCT1G125 is designed as one kind of high-speed Si-gate CMOS device that provides one non-inverting buffer/line driver with 3-state output. Features of the 74AHCT1G125 are:(1)Symmetrical output impedance;(2)High noise immunity;(3)Low power dissipation;(4)Balanced propagation delays;(5)Very small 5-pin package;(6)Output capability: standard;(7)Specified from -40 to +125 °C.

The absolute maximum ratings of the 74AHCT1G125 can be summarized as:(1)supply voltage: -0.5 to +7.0 V;(2)input voltage: -0.5 to +7.0 V;(3)input diode current: -20 mA;(4)output diode current: ±20 mA;(5)output source or sink current: ±25 mA;(6)VCC or GND current: ±75 mA;(7)storage temperature: -65 to +150 °C;(8)power dissipation per package (for temperature range from -40 to +125 °C): 250 mW. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .

The 74AHCT1G125 is a high-speed Si-gate CMOS device.

The 74AHCT1G125 provides one non-inverting buffer/line driver with 3-state output. The 3-state output iscontrolled by the output enable input (OE). A HIGH at OEcauses the output to assume a high-impedance OFF-state.