74AHCT1G08GW

The 74AHCT1G08GW is a high-speed Si-gate CMOS device. The features of 74AHCT1G08GW are: (1)Symmetrical output impedance; (2)High noise immunity; (3)ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V, MM EIA/JESD22-A115-A exceeds 200 V, CDM EIA/JESD22-C101 exceeds 1000 V.; (4)Low power dissipation; (5)Balanced propagation delays; (6)Very small 5-pin package; (7)Output capability: standard; (8)Specified from -40 to +125 °C.

The following is about the maximum ratings of 74AHCT1G08GW: (1)DC supply voltage: +7.0 V ; (2)supply voltage: -0.5 +7.0 V ; (3)input diode current: -0.5 -20 mA at VI < -0.5 V; (4)switch diode current: - ±20 mA at  VO < -0.5 V or VO > VCC + 0.5 V; (5)switch source or sink current: ±25 mA at  -0.5 V < VO < VCC + 0.5 V; (6)VCC or GND current: ±75 mA ; (7)storage temperature: -65 +150  °C ; (8)power dissipation per package: - 250 mW for temperature range of the 74AHCT1G08GW: -40 to +125 °C.