74AHCT1G07

Features:

· High noise immunity
· ESD protection:
  HBM EIA/JESD22-A114-A exceeds 2000 V
  MM EIA/JESD22-A115-A exceeds 200 V
· Low power dissipation
· SOT353 package
· Output capability standard (open drain).


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCC	DC supply voltage		-0.5	+7.0	V
VI	input voltage		-0.5	+7.0	V
IIK	DC input diode current	VI < -0.5 V; note 1	-	-20	mA
IOK	DC output clamping diode current	VO < -0.5 V; note 1	-	±20	mA
VO	output voltage	active mode; note 1	-0.5	VCC + 0.5	V
		high-impedance mode; note 1	-0.5	7.0	V
IO	DC output sink current	VO > -0.5 V	-	±25	mA
ICC	DC VCC or GND current		-	±75	mA
Tstg	storage temperature		-65	+150	°C
PD	power dissipation per package	for temperature range: -40 to +125 °C; note 2	-	200	mW

Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55 °C the value of PD derates linearly with 2.5 mW/K.


Description

The 74AHCT1G07 is a high-speed Si-gate CMOS device.

The 74AHCT1G07 provides the non-inverting buffer.

The output of the 74AHCT1G07 devices is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level.