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74AHCT1G00

Features: ` Symmetrical output impedance` High noise immunity` ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.` Low power dissipation` Balanced propagation delays` Very small 5-pin package` Output capability: standard` ...

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SeekIC No. : 004249219 Detail

74AHCT1G00: Features: ` Symmetrical output impedance` High noise immunity` ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.` Low pow...

74AHCT1G00 Data Sheet

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Part Number:
74AHCT1G00
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Symmetrical output impedance
` High noise immunity
` ESD protection:
  HBM EIA/JESD22-A114-A exceeds 2000 V
  MM EIA/JESD22-A115-A exceeds 200 V
  CDM EIA/JESD22-C101 exceeds 1000 V.
` Low power dissipation
` Balanced propagation delays
` Very small 5-pin package
` Output capability: standard
` Specified from -40 to +125 °C.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage   -0.5 +7.0 V
VI input voltage   -0.5 +7.0 V
IIK input diode current VI< -0.5 V - -20 mA
IOK output diode current VO < -0.5 V or VO > VCC + 0.5 V; note 1 - ±20 mA
IO output source or sink current -0.5 V < VO< VCC + 0.5 V - ±25 mA
ICC VCC or GND current   - ±75 mA
Tstg storage temperature   -65 +150 °C
PD power dissipation per package for temperature range from -40 to +125 °C - 250 mW
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.


Description

The 74AHCT1G00 is a high-speed Si-gate CMOS device.

The 74AHCT1G00 provides the 2-input NAND function.


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