Features: · ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V· Balanced propagation delays· Inputs accepts voltages higher than VCC· For AHC only: operates with CMOS input levels· For AHCT only: operates with TTL input levels...
74AHCT14: Features: · ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V· Balanced propagation delays· Inputs accepts voltages higher th...
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SYMBOL |
PARAMETER | CONDITIONS |
MIN. |
MAX. |
UNIT |
VCC |
DC supply voltage |
-0.5 |
+7.0 |
V | |
VI |
input voltage |
-0.5 |
+7.0 |
V | |
LIK |
DC input diode current | VI < -0.5 V; note 1 |
- |
-20 |
mA |
IOK |
DC output diode current | VO < -0.5 V or VO > VCC + 0.5 V; note 1 |
- |
±20 |
mA |
IO |
DC output source or sink current | -0.5 V < VO < VCC + 0.5 V |
- |
±25 |
mA |
ICC |
DC VCC or GND current |
- |
±75 |
mA | |
Tstg |
storage temperature |
-65 |
±150 |
||
PD |
power dissipation per package | for temperature range from -40 to +125 °C; note 2 |
- |
500 |
m/W |
The 74AHCT14 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7A.
The 74AHCT14 provide six inverting buffers with Schmitt-trigger action. They are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.