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74AHCT132

Features: ESD protection: HBMEIA/JESD22-A114-A exceeds 2000V; MMEIA/JESD22-A115-A exceeds 200V CDMEIA/JESD22-C101 exceeds 1000VBalanced propagation delaysInputs accepts voltages higher than VCCFor AHC only:operates with CMOS input levelsFor AHCT only:operates with TTL input levelsSpecified from -4...

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SeekIC No. : 004249213 Detail

74AHCT132: Features: ESD protection: HBMEIA/JESD22-A114-A exceeds 2000V; MMEIA/JESD22-A115-A exceeds 200V CDMEIA/JESD22-C101 exceeds 1000VBalanced propagation delaysInputs accepts voltages higher than VCCFor A...

74AHCT132 Data Sheet

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Part Number:
74AHCT132
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

ESD protection:
   HBMEIA/JESD22-A114-A exceeds 2000V;
   MMEIA/JESD22-A115-A exceeds 200V
   CDMEIA/JESD22-C101 exceeds 1000V
Balanced propagation delays
Inputs accepts voltages higher than VCC
For AHC only:operates with CMOS input levels
For AHCT only:operates with TTL input levels
Specified from -40 to+85 and +125.


Pinout

Connection Diagram


Specifications

Symbol

Parameter
CONDITIONS

Min

Max

Unit

VCC

DC Power Supplies

-0.5

7.0

V

VI

input voltage range

-0.5

7.0

V

IiK
 DC input diode current
VI <-0.5V
-
-20
mA
IOK
 DC output diode current
VO <-0.5V or VO>VCC+0.5V;
-
±20
mA
IO
 DC output source or sink current
-0.5V<VO <VCC +0.5V
-
±25
mA

ICC

DC VCC or GND current

-0.3

±75

mA

Tstg

Storage Temperature

-65

+150

 

PD

 power dissipation per package
for temperature range:-40to+125

-

500

mW




Description

The 74AHCT132 are high-speed Si-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No.7A. The 74AHCT132 contain four 2-input NAND gates which accept standard input signals. They are capable of transforming slowly changing input signals into sharply defined, jitter free output signals. The gate switches at different points for positive and negative-going
signals. The difference between the positive voltage VT+ and the negative VT-  is defined as the hysteresis voltage VH.




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