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74AHC3G14

Features: ` Symmetrical output impedance` High noise immunity` ESD protection: HBM EIA/JESD22-A114-B exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 500 V.` Low power dissipation` Balanced propagation delays` Multiple package options` Specified from -40 °C to +85 °...

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SeekIC No. : 004249195 Detail

74AHC3G14: Features: ` Symmetrical output impedance` High noise immunity` ESD protection: HBM EIA/JESD22-A114-B exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 500 V.` Low powe...

74AHC3G14 Data Sheet

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Part Number:
74AHC3G14
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Symmetrical output impedance
` High noise immunity
` ESD protection:
  HBM EIA/JESD22-A114-B exceeds 2000 V
  MM EIA/JESD22-A115-A exceeds 200 V
  CDM EIA/JESD22-C101 exceeds 500 V.
` Low power dissipation
` Balanced propagation delays
` Multiple package options
` Specified from -40 °C to +85 °C and -40 °C to +125 °C.


Application

· Wave and pulse shapers
· Astable multivibrators
· Monostable multivibrators.


Pinout

Connection Diagram Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VCC supply voltage   -0.5 +7.0 V
VI input voltage
-0.5 +7.0 V
IIK input diode current VI< -0.5 V - -20 mA
IOK output diode current VO< -0.5 V or VO> VCC + 0.5 V; note 1 - ±20 mA
IO output source or sink current -0.5 V < VO< VCC + 0.5 V - ±25 mA
ICC, IGND VCC or GND current   - ±75 mA
Tstg storage temperature   -65 +150 °C
PD power dissipation Tamb = -40 °C to +125 °C - 250 mW
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.


Description

The 74AHC3G14 is a high-speed Si-gate CMOS device.

The 74AHC3G14 provides three inverting buffers with Schmitt-trigger action. These devices are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.


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