74AHC3G04 Selling Leads, Price trend, 74AHC3G04 DataSheet download, circuit diagram from SeekIC.com

Features: • Symmetrical output impedance• High noise immunity• ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.• Low power dissipation• Balanced propagation delays• SOT505-2 and SOT765...

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SeekIC No. : 004249194 Detail

74AHC3G04: Features: • Symmetrical output impedance• High noise immunity• ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceed...

74AHC3G04 Data Sheet

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Part Number:: 74AHC3G04
Supply Ability:: 5000

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Qty
1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/23

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Product Details

Description

Features:

• Symmetrical output impedance
• High noise immunity
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V.
• Low power dissipation
• Balanced propagation delays
• SOT505-2 and SOT765-1 package
• Specified from −40 to +85 and −40 to +125 .

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CC	supply voltage		−0.5	+7.0	V
V_I	input voltage		−0.5	+7.0	V
I_IK	input diode current	V_I < −0.5 V	−	-20	mA
I_OK	output diode current	−0.5 V < V_O <V_CC + 0.5 V; note 1	−	±20	mA
I_O	output source or sink current	−0.5V<V_O <V_CC + 0.5 V; note 1	−	±25	mA
I_CC,I_GND	V_CC or GND current		−	±75	mA
T_stg	storage temperature		−65	+150
P_D	power dissipation	T_amb = −40 to +125	−	250	mW

Note

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

Description

The 74AHC3G04 are high-speed Si-gate CMOS devices.

The 74AHC3G04 provides three inverting buffer.

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74AHC3G04

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