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74AHC3G04

Features: • Symmetrical output impedance• High noise immunity• ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.• Low power dissipation• Balanced propagation delays• SOT505-2 and SOT765...

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SeekIC No. : 004249194 Detail

74AHC3G04: Features: • Symmetrical output impedance• High noise immunity• ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceed...

74AHC3G04 Data Sheet

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Part Number:
74AHC3G04
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Symmetrical output impedance
• High noise immunity
• ESD protection:
  HBM EIA/JESD22-A114-A exceeds 2000 V
  MM EIA/JESD22-A115-A exceeds 200 V
  CDM EIA/JESD22-C101 exceeds 1000 V.
• Low power dissipation
• Balanced propagation delays
• SOT505-2 and SOT765-1 package
• Specified from −40 to +85 and −40 to +125 .


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage   −0.5 +7.0 V
VI input voltage   −0.5 +7.0 V
IIK input diode current VI < −0.5 V − -20 mA
IOK output diode current −0.5 V < VO <VCC + 0.5 V; note 1 − ±20 mA
IO output source or sink current −0.5V<VO <VCC + 0.5 V; note 1 − ±25 mA
ICC,IGND VCC or GND current   − ±75 mA
Tstg storage temperature   −65 +150
PD power dissipation Tamb = −40 to +125 − 250 mW

Note

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.


Description

The 74AHC3G04 are high-speed Si-gate CMOS devices.

The 74AHC3G04 provides three inverting buffer.




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