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74AHC2G126

Features: Symmetrical output impedance High noise immunity ESD protection: HBM EIA/JESD22-A114-B exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V. Low power dissipation Balanced propagation delays Multiple package options Specified from -40 °C to +85 °C and fro...

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SeekIC No. : 004249185 Detail

74AHC2G126: Features: Symmetrical output impedance High noise immunity ESD protection: HBM EIA/JESD22-A114-B exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V. Low power diss...

74AHC2G126 Data Sheet

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Part Number:
74AHC2G126
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Symmetrical output impedance
High noise immunity
ESD protection:
  HBM EIA/JESD22-A114-B exceeds 2000 V
  MM EIA/JESD22-A115-A exceeds 200 V
  CDM EIA/JESD22-C101 exceeds 1000 V.
Low power dissipation
Balanced propagation delays
Multiple package options
Specified from -40 °C to +85 °C and from -40 °C to +125 °C.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions
Min Max Unit
VCC supply voltage   -0.5 +7.0 V
VI input voltage
-0.5 +7.0 V
IIK input diode current VI< -0.5 V - -20 mA
IOK output diode current VO> -0.5V or VO> VCC +0.5 V     [1] - ±20 mA
IO output source or sink current VO> -0.5 V or VO< VCC + 0.5 V - ±25 mA
ICC, IGND VCC or GND current   - ±750 mA
Tstg storage temperature   -65 +150 °C
Ptot power dissipation Tamb = -40 °C to +125 °C - 250 mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.


Description

The 74AHC2G126 is a high-speed Si-gate CMOS device.

The 74AHC2G126 provides a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enab le input (OE). A LOW at pin nOE causes the output to assume a high-impedance OFF-state.


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