74AHC245D

Number of Channels per Chip : 8
Output Type : 3-State
Packaging : Tube
Logic Type : CMOS
Supply Voltage - Max : 5.5 V
Supply Voltage - Min : 2 V
Maximum Operating Temperature : + 125 C
Package / Case : SO-20
Input Level : CMOS
Output Level : CMOS
High Level Output Current : - 8 mA
Low Level Output Current : 8 mA
Propagation Delay Time : 11.9 ns
Logic Family : AHC


Description

The 74AHC245D belongs to the 74AHC245/74AHCT245 features an Output Enable (OE) input for easy cascading and a send/receive (DIR) input for direction control. OE controls the outputs so that the buses are effectively isolated. The 74AHC/AHCT245 is a high-speed Si-gate CMOS device. The 74AHC/AHCT245 is an octal transceiver featuring non-inverting 3-state bus compatible outputs in both send and receive directions.

The features of 74AHC245D can be summarized as (1)ESD protection: HBM EIA/JESD22-A114-A, exceeds 2000 V, MM EIA/JESD22-A115-A, exceeds 200 V, CDM EIA/JESD22-C101, exceeds 1000 V; (2)balanced propagation delays; (3)all inputs have a schmitt-trigger action; (4)inputs accepts voltages higher than VCC; (5)for AHC only: operates with CMOS input levels; (6)for AHCT only: operates with TTL input levels; (7)specified from -40 to +85 and +125 °C.

The absolute maximum ratings of 74AHC245D are (1)VCC DC supply voltage: -0.5 to +7.0V; (2)VI input voltage range: -0.5 to +7.0V; (3)IIK DC input diode current(VI < -0.5 V; note 1): -20mA; (4)IOK DC output diode current(VO < -0.5 V or VO > VCC + 0.5 V; note 1): ±20mA; (5)IO DC output source or sink current(-0.5 V < VO < VCC + 0.5 V): ±25 mA; (6)ICC DC VCC or GND current: ±75mA; (7)Tstg storage temperature range: -65 to +150°C; (8)PD power dissipation per package(for temperature range: -40 to +125 °C; note 2): 500mW(1. The input and output voltage ratings may be exceeded if the input and output current ratings of the 74AHC245D are observed. 2. For SO packages: above 70 °C the value of PD derates linearly with 8 mW/K. For TSSOP packages: above 60 °C the value of PD derates linearly with 5.5 mW/K.)